Cesta:OKDatasheet > Semiconductor list > HYNIX Datasheet > HY51VS18163HGJ-7
HY51VS18163HGJ-7 spec: "Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns"
HY51VS18163HGJ-7 Podobné
- HY51V17403HGJ-6
- 4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns
- HY51V17403HGLJ-6
- 4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns, low power
- HY51V17403HGLJ-7
- 4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns, low power
- HY51V17403HGLT-6
- 4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns, low power
- HY51V17403HGLT-7
- 4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns, low power
- HY51V17403HGT-6
- 4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns
- HY51V17403HGT-7
- 4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns
- HY51V18163HGJ-7
- Dynamic RAM organized 1,048,576 words x 16bit, 70ns
HY51VS18163HGJ-7 Datasheet a Spec
Výrobcem : HYNIX
Balení : SOJ
Špendlíky : 42
Teplota : Min 0 °C | Max 70 °C
Velikost : 117 KB
Aplikace : "Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns"
HY51VS18163HGJ-7 PDF Download