| Část Ne | Výrobcem | Aplikace |
|---|
| UF5408G | JGD | Glass passivated ultra fast rectifier. Max recurrent peak reverse voltage 1000 V. Max average forward rectified current 3.0 A. |
| SMBJ5942A | JGD | 1.5W silicon surface mount zener diode. Zener voltage 51 V. Test current 7.3 mA. +-10% tolerance. |
| 1N4122D | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 36V. 1% tolerance. |
| ZMM5240D | JGD | Surface mount zener diode. Nominal zener voltage 10 V. Test current 20 mA. +-20% tolerance. |
| SF15LG | JGD | Glass passivated super fast rectifier. Max recurrent peak reverse voltage 300 V. Max average forward current 1.0 A. |
| MR852 | JGD | 3.0A, fast recovery rectifier. Max recurrent peak reverse voltage 200V. |
| P4KE20 | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 20 V. |
| KBP202 | JGD | Single-phase 2.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 200V. |
| SMAJ100 | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 100 V. |
| S2K | JGD | Surface mount rectifier. Max recurrent peak reverse voltage 800 V. Max average forward rectified current 1.5 A. |
| SR240 | JGD | Schottky barrier rectifier. Max recurrent peak reverse voltage 40 V. Max average forward current 2.0 A. |
| FR106G | JGD | 1.0A, glass passivated fast recovery rectifier. Max recurrent peak reverse voltage 800V. |
| 1N5935C | JGD | 1.5 W, silicon zener diode. Zener voltage 27V. Test current 13.9 mA. +-2% tolerance. |
| SMAJ160C | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 160 V. Bidirectional. |
| BZX84C13 | JGD | 350mW zener diode, 13V |
| KBJ408G | JGD | Glass passivated single-phase bridge rectifier. Forward current 4.0 A. Max recurrent peak reverse voltage 800V. |
| 1N4127 | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 56V. |
| 3EZ180D2 | JGD | 3 W, silicon zener diode. Nominal voltage 180 V, current 4.2 mA, +-2% tolerance. |
| SMBJ43CA | JGD | Surface mount transient voltage suppressor. Breakdown voltage 47.8 V (min), 52.8 V (max). Test current 1.0 mA. Bidirectional. |
| 1N5532C | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 12.0 V. Test current 1.0 mAdc. +-2% tolerance. |
| IN5400 | JGD | 3.0 A, silicon rectifier. Max recurrent peak reverse voltage 50 V, max RMS voltage 35 V, max D. C blocking voltage 50 V. |
| 1N979D | JGD | 0.5W, silicon zener diode. Zener voltage 56V. Test current 2.2mA. +-1% tolerance. |
| 3EZ150D2 | JGD | 3 W, silicon zener diode. Nominal voltage 150 V, current 5.0 mA, +-2% tolerance. |
| SR230 | JGD | Schottky barrier rectifier. Max recurrent peak reverse voltage 30 V. Max average forward current 2.0 A. |
| KBU600 | JGD | Single phase 6.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 50V. |
| KBPC1006 | JGD | Single phase 10 A silicon bridge rectifier. Max recurrent peak reverse voltage 600V. |
| 1N5524D | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 5.6 V. Test current 3.0 mAdc. +-1% tolerance. |
| MMBD1702 | JGD | Surface mount switching diode. |
| SMAJ20 | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 20 V. |
| SMAJ15C | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 15 V. Bidirectional. |
