| Část Ne | Výrobcem | Aplikace |
|---|
| 1N5545B | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 30.0 V. Test current 1.0 mAdc. +-5% tolerance. |
| P4KE62CA | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 62 V. Bidirectional. |
| 1N4746D | JGD | 1W zener diode. Nominal zener voltage 18V. 1% tolerance. |
| P6KE51 | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 51 V. |
| P4KE400 | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 400 V. |
| DF04S | JGD | Single phase 1.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 400 V. |
| 1N4111D | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 17V. 1% tolerance. |
| ZMM5239A | JGD | Surface mount zener diode. Nominal zener voltage 9.1 V. Test current 20 mA. +-3% tolerance. |
| 1N5946B | JGD | 1.5 W, silicon zener diode. Zener voltage 75 V. Test current 5.0 mA. +-5% tolerance. |
| SFR302 | JGD | Soft fast recovery rectifier. Max recurrent peak reverse voltage 100 V. Max average forward current 3.0 A. |
| SR204 | JGD | Schottky barrier rectifier. Max recurrent peak reverse voltage 40 V. Max average forward current 2.0 A. |
| 1N5915A | JGD | 1.5 W, silicon zener diode. Zener voltage 3.9V. Test current 96.1 mA. +-10% tolerance. |
| 1N5946D | JGD | 1.5 W, silicon zener diode. Zener voltage 75 V. Test current 5.0 mA. +-1% tolerance. |
| SMBJ5915A | JGD | 1.5W silicon surface mount zener diode. Zener voltage 3.9 V. Test current 96.1 mA. +-10% tolerance. |
| 3EZ100D3 | JGD | 3 W, silicon zener diode. Nominal voltage 100 V, current 7.5 mA, +-3% tolerance. |
| SMBJ9.0C | JGD | Surface mount transient voltage suppressor. Breakdown voltage 10.0 V (min), 12.2 V (max). Test current 1.0 mA. Bidirectional. |
| SMAJ26C | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 26 V. Bidirectional. |
| 3EZ15D4 | JGD | 3 W, silicon zener diode. Nominal voltage 15 V, current 50 mA, +-4% tolerance. |
| KBP104G | JGD | Single-phase 1.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 400V. |
| P4KE24CA | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 24 V. Bidirectional. |
| SMAJ85CA | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 85 V. Bidirectional. |
| P6KE170CA | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 170 V. Bidirectional. |
| KBPC302G | JGD | Single phase 3.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 200V. |
| 1N4619C | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 3.0V. 2% tolerance. |
| ZMM5260C | JGD | Surface mount zener diode. Nominal zener voltage 43 V. Test current 3 mA. +-10% tolerance. |
| 3EZ62D10 | JGD | 3 W, silicon zener diode. Nominal voltage 62 V, current 12 mA, +-10% tolerance. |
| P4KE110CA | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 110 V. Bidirectional. |
| 1N5392 | JGD | 1.5 A, silicon rectifier. Max recurrent peak reverse voltage 100 V, max RMS voltage 70 V, max D. C blocking voltage 100 V. |
| P6KE43A | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 43 V. |
| 1N5950A | JGD | 1.5 W, silicon zener diode. Zener voltage 110 V. Test current 3.4 mA. +-10% tolerance. |
