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AS4LC2M8S1-10TC spec: 3.3V 2M x 8 CMOS synchronous DRAM, 1/frequency - 10 ns
AS4LC2M8S1-10TC Podobné
- AS4LC1M16E5-50JI
- 3V 1M x 16 CM0S DRAM (EDO), 50ns RAS access time
- AS4LC1M16E5-50TC
- 3V 1M x 16 CM0S DRAM (EDO), 50ns RAS access time
- AS4LC1M16E5-50TC
- 3V 1M x 16 CM0S DRAM (EDO), 50ns RAS access time
- AS4LC1M16E5-50TI
- 3V 1M x 16 CM0S DRAM (EDO), 50ns RAS access time
- AS4LC1M16E5-50TI
- 3V 1M x 16 CM0S DRAM (EDO), 50ns RAS access time
- AS4LC1M16E5-50TI
- 3V 1M x 16 CM0S DRAM (EDO), 50ns RAS access time
- AS4LC1M16E5-60JC
- 3V 1M x 16 CM0S DRAM (EDO), 60ns RAS access time
- AS4LC1M16E5-60JI
- 3V 1M x 16 CM0S DRAM (EDO), 60ns RAS access time
AS4LC2M8S1-10TC Datasheet a Spec
Výrobcem : Alliance
Balení : TSOPII
Špendlíky : 46
Teplota : Min 0 °C | Max 70 °C
Velikost : 783 KB
Aplikace : 3.3V 2M x 8 CMOS synchronous DRAM, 1/frequency - 10 ns
AS4LC2M8S1-10TC PDF Download