BS616UV1010EC spec: 150ns 15-10mA 1.8-2.6V ultra low power/voltage CMOS SRAM 64K x 16bit

BS616UV1010EC Podobné

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BS616LV4011BC
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- 70/100ns 20mA 2.7-3.6V ultra low power/voltage CMOS SRAM 256K x 16 or 512K x 8bit switchable
BS616LV2012DI
- 70/100ns 2.7-3.6V ultra low power/voltage CMOS SRAM 128K x 16bit
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- 70/100ns 25mA 1.8-2.3V ultra low power/voltage CMOS SRAM 1M x 16 or 2M x 8bit switchable
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BS616LV8013BC
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BS616UV1010AC
- 150ns 15-10mA 1.8-2.6V ultra low power/voltage CMOS SRAM 64K x 16bit

BS616UV1010EC Datasheet a Spec

Výrobcem : BSI

Balení : TSOP

Špendlíky : 44

Teplota : Min 0 °C | Max 70 °C

Velikost : 237 KB

Aplikace : 150ns 15-10mA 1.8-2.6V ultra low power/voltage CMOS SRAM 64K x 16bit