X3N173 spec: 30 V, diode protected P-Channel enhancement mode MOSFET general purpose amplifier/switch

X3N173 Podobné

X3N163
- 40 V, P-Channel enhancement mode JFET general purpose amplifier switch
X3N164
- 40 V, P-Channel enhancement mode JFET general purpose amplifier switch
X3N165
- 40 V, monolithic dual P-Channel enhancement mode JFET general purpose amplifier
X3N166
- 40 V, monolithic dual P-Channel enhancement mode JFET general purpose amplifier
X3N170
- 25 V, N-Channel enhancement mode MOSFET switch
X3N171
- 25 V, N-Channel enhancement mode MOSFET switch
X3N172
- 40 V, diode protected P-Channel enhancement mode MOSFET general purpose amplifier/switch
X3N173
- 30 V, diode protected P-Channel enhancement mode MOSFET general purpose amplifier/switch

X3N173 Datasheet a Spec

Výrobcem : Calogic

Balení : SMD

Špendlíky : 4

Teplota : Min -55 °C | Max 150 °C

Velikost : 36 KB

Aplikace : 30 V, diode protected P-Channel enhancement mode MOSFET general purpose amplifier/switch