P6606-320 spec: Active area 2x2mm; 0.2mW; InSb photoconductive detector thermoelectrically cooled detector capable of long-term measurements

P6606-320 Podobné

P6606-110
- Active area 1x1mm; 0.2mW; InSb photoconductive detector thermoelectrically cooled detector capable of long-term measurements
P6606-210
- Active area 1x1mm; 0.2mW; InSb photoconductive detector thermoelectrically cooled detector capable of long-term measurements
P6606-310
- Active area 1x1mm; 0.2mW; InSb photoconductive detector thermoelectrically cooled detector capable of long-term measurements
P6606-320
- Active area 2x2mm; 0.2mW; InSb photoconductive detector thermoelectrically cooled detector capable of long-term measurements

P6606-320 Datasheet a Spec

Výrobcem : Hamamatsu

Balení : TO-8

Špendlíky : 6

Teplota : Min -40 °C | Max 60 °C

Velikost : 170 KB

Aplikace : Active area 2x2mm; 0.2mW; InSb photoconductive detector thermoelectrically cooled detector capable of long-term measurements