HLB122J spec: Emitter to base voltage6V; NPN triple diffused planar type high voltage transistor for use in switching applications

HLB122J Podobné

HLB120A
- Emitter to base voltage6V; NPN triple diffused planar type high voltage transistor for use in switching applications
HLB121I
- Emitter to base voltage6V; NPN triple diffused planar type high voltage transistor for use in switching applications
HLB122I
- Emitter to base voltage6V; NPN triple diffused planar type high voltage transistor for use in switching applications
HLB122J
- Emitter to base voltage6V; NPN triple diffused planar type high voltage transistor for use in switching applications
HLB123I
- Emitter to base voltage8V; NPN epitaxial planar transistor
HLB123T
- Emitter to base voltage8V; NPN epitaxial planar transistor
HLB124E
- Emitter to base voltage8V; NPN epitaxial planar transistor for high voltage, high speed switching inductive circuit and amplifier applications
HLB125E
- Emitter to base voltage9V; NPN epitaxial planar transistor for light applications and low switch-mode power suppies

HLB122J Datasheet a Spec

Balení : TO-252

Špendlíky : 3

Teplota : Min 0 °C | Max 0 °C

Velikost : 37 KB

Aplikace : Emitter to base voltage6V; NPN triple diffused planar type high voltage transistor for use in switching applications