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IRF5Y1310CM spec: HEXFET power MOSFET thru-hole. BVDSS = 100V, RDS(on) = 0.044 Ohm, ID = 18A
IRF5Y1310CM Podobné
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- IRF520NL
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- IRF520NS
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IRF5Y1310CM Datasheet a Spec
Výrobcem : IR
Balení : TO-257AA
Špendlíky : 3
Teplota : Min -55 °C | Max 150 °C
Velikost : 117 KB
Aplikace : HEXFET power MOSFET thru-hole. BVDSS = 100V, RDS(on) = 0.044 Ohm, ID = 18A
IRF5Y1310CM PDF Download