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IXBH16N170A spec: 1700V high voltage, high gain BIMOSFET monolithic bipolar MOS transistor
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IXBH16N170A Datasheet a Spec
Výrobcem : IXYS
Balení : TO-247AD
Špendlíky : 3
Teplota : Min -40 °C | Max 150 °C
Velikost : 56 KB
Aplikace : 1700V high voltage, high gain BIMOSFET monolithic bipolar MOS transistor
IXBH16N170A PDF Download