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IXBT16N170 spec: 1700V high voltage, high gain BIMOSFET monolithic bipolar MOS transistor
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IXBT16N170 Datasheet a Spec
Výrobcem : IXYS
Balení : TO-268
Špendlíky : 3
Teplota : Min -55 °C | Max 150 °C
Velikost : 54 KB
Aplikace : 1700V high voltage, high gain BIMOSFET monolithic bipolar MOS transistor
IXBT16N170 PDF Download