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IXDT30N120 spec: 1200V high voltage IGBT with optional diode
IXDT30N120 Podobné
- IXDT30N120
- 1200V high voltage IGBT with optional diode
- IXDT30N120D1
- 1200V high voltage IGBT with optional diode
IXDT30N120 Datasheet a Spec
Výrobcem : IXYS
Balení : TO-268AA
Špendlíky : 3
Teplota : Min -55 °C | Max 150 °C
Velikost : 94 KB
Aplikace : 1200V high voltage IGBT with optional diode
IXDT30N120 PDF Download