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IXGH31N60D1 spec: 600V HiPerFET power MOSFET
IXGH31N60D1 Podobné
- IXGH12N100
- 1000V low voltage high speed IGBT
- IXGH12N100A
- 1000V low voltage high speed IGBT
- IXGH12N100AU1
- 1000V high voltage IGBT
- IXGH12N100U1
- 1000V high voltage IGBT
- IXGH12N60B
- 600V HiPerFAST IGBT
- IXGH12N60BD1
- 600V HiPerFAST IGBT
- IXGH12N60C
- 600V HiPerFAST IGBT
- IXGH12N60CD1
- 600V HiPerFAST IGBT
IXGH31N60D1 Datasheet a Spec
Výrobcem : IXYS
Balení : TO-247
Špendlíky : 3
Teplota : Min -55 °C | Max 150 °C
Velikost : 58 KB
Aplikace : 600V HiPerFET power MOSFET
IXGH31N60D1 PDF Download