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IXTH13N110 spec: 1100V MegaMOS FET
IXTH13N110 Podobné
- IXTH10N100
- 1000V HiPerFET power MOSFET
- IXTH10P50
- 500V standard power MOSFET
- IXTH10P60
- 600V standard power MOSFET
- IXTH11N80
- 800V HiPerFET power MOSFET
- IXTH11P50
- 500V standard power MOSFET
- IXTH12N100
- 1000V HiPerFET power MOSFET
- IXTH12N90
- 900V MegaMOS FET
- IXTH13N110
- 1100V MegaMOS FET
IXTH13N110 Datasheet a Spec
Výrobcem : IXYS
Balení : TO-247
Špendlíky : 3
Teplota : Min -55 °C | Max 150 °C
Velikost : 50 KB
Aplikace : 1100V MegaMOS FET
IXTH13N110 PDF Download