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HYB514100BJ-50 spec: 4M x 1bit DRAM
HYB514100BJ-50 Podobné
- HYB511000BJ-50
- 1M x 1bit DRAM
- HYB511000BJ-70
- 1M x 1bit DRAM
- HYB511000BJL-50
- 1M x 1bit DRAM
- HYB511000BJL-70
- 1M x 1bit DRAM
- HYB5116160BSJ-50
- 1M x 16-DRAM
- HYB5116160BSJ-60
- 1M x 16-DRAM
- HYB5116160BSJ-70
- 1M x 16-DRAM
- HYB5116165BJ-50
- 1M x 16bit EDO-DRAM
HYB514100BJ-50 Datasheet a Spec
Výrobcem : Infineon
Balení : P-SOJ-26/20-2 300 mi
Špendlíky : 26
Teplota : Min 0 °C | Max 70 °C
Velikost : 118 KB
Aplikace : 4M x 1bit DRAM
HYB514100BJ-50 PDF Download