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LD242E7800 spec: GaAs infared emitter
LD242E7800 Podobné
- LD242-2
- GaAs infared emitter
- LD242-3
- GaAs infared emitter
- LD242E7800
- GaAs infared emitter
LD242E7800 Datasheet a Spec
Výrobcem : Infineon
Balení : TO-18
Špendlíky : 2
Teplota : Min -40 °C | Max 80 °C
Velikost : 42 KB
Aplikace : GaAs infared emitter
LD242E7800 PDF Download