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IW4023BD spec: Triple 3-input NAND gate, high-voltage silicon-gate CMOS
IW4023BD Podobné
- IW4001BD
- Quad 2-input NOR gate, high-voltage silicon-gate CMOS
- IW4001BN
- Quad 2-input NOR gate, high-voltage silicon-gate CMOS
- IW4002BD
- Dual 4-input NOR gate, high-voltage silicon-gate CMOS
- IW4002BN
- Dual 4-input NOR gate, high-voltage silicon-gate CMOS
- IW4002BN
- Dual 4-input NOR gate, high-voltage silicon-gate CMOS
- IW4015BN
- Dual 4-stage static shift register, high-voltage silicon-gate CMOS
- IW4017BD
- Counter/driver, high-voltage silicon-gate CMOS
- IW4017BN
- Counter/driver, high-voltage silicon-gate CMOS
IW4023BD Datasheet a Spec
Výrobcem : Integral
Balení : SOIC
Špendlíky : 14
Teplota : Min -55 °C | Max 125 °C
Velikost : 118 KB
Aplikace : Triple 3-input NAND gate, high-voltage silicon-gate CMOS
IW4023BD PDF Download