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BC261 Podobné

  • BC261
    • 360mW PNP high gain low noise silicon planar epitaxial transistor
  • BC262
    • 360mW PNP high gain low noise silicon planar epitaxial transistor
  • BC263
    • 360mW PNP high gain low noise silicon planar epitaxial transistor

BC261 Datasheet a Spec

Výrobcem : Micro Electronics 

Balení : TO-18 

Špendlíky : 3 

Teplota : Min -65 °C | Max 200 °C

Velikost : 103 KB

Aplikace : 360mW PNP high gain low noise silicon planar epitaxial transistor 

BC261 PDF Download