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BC302 spec: 850mW NPN silicon AF medium power amplifier
BC302 Podobné
- BC300
- 850mW NPN silicon AF medium power amplifier
- BC301
- 850mW NPN silicon AF medium power amplifier
- BC302
- 850mW NPN silicon AF medium power amplifier
- BC303
- 850mW NPN silicon AF medium power amplifier
- BC304
- 850mW NPN silicon AF medium power amplifier
- BC307
- 300mW PNP silicon planar epitaxial transistor
- BC308
- 300mW PNP silicon planar epitaxial transistor
- BC309
- 300mW PNP silicon planar epitaxial transistor
BC302 Datasheet a Spec
Výrobcem : Micro Electronics
Balení : TO-39
Špendlíky : 3
Teplota : Min -55 °C | Max 175 °C
Velikost : 134 KB
Aplikace : 850mW NPN silicon AF medium power amplifier
BC302 PDF Download