Cesta:OKDatasheet > Semiconductor list > Micro Electronics Datasheet > MPS6512S
MPS6512S spec: 4V, 350mW NPN silicon planar epitaxial transistor
MPS6512S Podobné
- MPS6512
- 4V, 350mW NPN silicon planar epitaxial transistor
- MPS6512S
- 4V, 350mW NPN silicon planar epitaxial transistor
- MPS6513
- 4V, 350mW NPN silicon planar epitaxial transistor
- MPS6514
- 4V, 350mW NPN silicon planar epitaxial transistor
- MPS6515
- 4V, 350mW NPN silicon planar epitaxial transistor
- MPS6516
- 4V, 350mW PNP silicon planar epitaxial transistor
- MPS6517
- 4V, 350mW PNP silicon planar epitaxial transistor
- MPS6518
- 4V, 350mW PNP silicon planar epitaxial transistor
MPS6512S Datasheet a Spec
Výrobcem : Micro Electronics
Balení : TO-92A
Špendlíky : 3
Teplota : Min -55 °C | Max 150 °C
Velikost : 49 KB
Aplikace : 4V, 350mW NPN silicon planar epitaxial transistor
MPS6512S PDF Download