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MGW12N120D spec: Insulated gate bipolar transistor with anti-parallel diode
MGW12N120D Podobné
- MGW12N120
- Insulated gate bipolar transistor
- MGW12N120D
- Insulated gate bipolar transistor with anti-parallel diode
MGW12N120D Datasheet a Spec
Výrobcem : Motorola
Balení : TO-247AE
Špendlíky : 3
Teplota : Min -55 °C | Max 150 °C
Velikost : 274 KB
Aplikace : Insulated gate bipolar transistor with anti-parallel diode
MGW12N120D PDF Download