MTW6N100E spec: TMOS E-FET power field effect transistor TO-247 with isolated mounting hole

MTW6N100E Podobné

MTW6N100E
- TMOS E-FET power field effect transistor TO-247 with isolated mounting hole

MTW6N100E Datasheet a Spec

Výrobcem : Motorola

Balení : TO-247AE

Špendlíky : 4

Teplota : Min -55 °C | Max 150 °C

Velikost : 214 KB

Aplikace : TMOS E-FET power field effect transistor TO-247 with isolated mounting hole