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NE321000 spec: A GaAs HJ-FET chip for ultra low-noise high-gain amplification
NE321000 Podobné
- NE321000
- A GaAs HJ-FET chip for ultra low-noise high-gain amplification
- NE3210S01
- N-channel HJ-FET
- NE3210S01-T1
- N-channel HJ-FET
- NE3210S01-T1B
- N-channel HJ-FET
- NE32484A
- N channel heterojunction type field effect transistor
- NE32484A-SL
- N channel heterojunction type field effect transistor
- NE32484A-SL
- N channel heterojunction type field effect transistor
- NE32484A-SL
- N channel heterojunction type field effect transistor
NE321000 Datasheet a Spec
Výrobcem : NEC
Balení : Chip
Špendlíky : 0
Teplota : Min 0 °C | Max 0 °C
Velikost : 52 KB
Aplikace : A GaAs HJ-FET chip for ultra low-noise high-gain amplification
NE321000 PDF Download