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NE4210S01-T1B spec: GaAs HJ-FET for X to Ku band ultra-low noise, high gain amplification
NE4210S01-T1B Podobné
- NE4210M01-T1
- N-channel HJ-FET
- NE4210M01-T2
- N-channel HJ-FET
- NE4210M01-T2
- N-channel HJ-FET
- NE4210S01-T1
- GaAs HJ-FET for X to Ku band ultra-low noise, high gain amplification
- NE4210S01-T1B
- GaAs HJ-FET for X to Ku band ultra-low noise, high gain amplification
- NE425S01-T1
- N-channel HJ-FET
- NE429M01
- N-channel HJ-FET
- NE429M01-T1
- N-channel HJ-FET
NE4210S01-T1B Datasheet a Spec
Výrobcem : NEC
Balení : 4-pin u-x type mold
Špendlíky : 0
Teplota : Min 0 °C | Max 0 °C
Velikost : 71 KB
Aplikace : GaAs HJ-FET for X to Ku band ultra-low noise, high gain amplification
NE4210S01-T1B PDF Download