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MGY20N120D spec: Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel
MGY20N120D Podobné
- MGY20N120D
- Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel
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- Insulated Gate Bipolar Transistor N-Channel
- MGY25N120
- Insulated Gate Bipolar Transistor N-Channel
- MGY25N120D
- Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel
MGY20N120D Datasheet a Spec
Výrobcem : ON Semiconductor
Balení : TO-3PBL
Špendlíky : 3
Teplota : Min 0 °C | Max 0 °C
Velikost : 188 KB
Aplikace : Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel
MGY20N120D PDF Download