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MJE18002D2 spec: High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-In Efficient Antisaturation Network
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MJE18002D2 Datasheet a Spec
Výrobcem : ON Semiconductor
Balení : TO-220
Špendlíky : 3
Teplota : Min 0 °C | Max 0 °C
Velikost : 167 KB
Aplikace : High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-In Efficient Antisaturation Network
MJE18002D2 PDF Download