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PHB3N50E spec: 500 V, power MOS transistor avalanche energy rated
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PHB3N50E Datasheet a Spec
Výrobcem : Philips
Balení : SOT
Špendlíky : 3
Teplota : Min -55 °C | Max 150 °C
Velikost : 85 KB
Aplikace : 500 V, power MOS transistor avalanche energy rated
PHB3N50E PDF Download