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PHD6N10E spec: 100 V, power MOS transistor
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PHD6N10E Datasheet a Spec
Výrobcem : Philips
Balení : SOT
Špendlíky : 3
Teplota : Min -55 °C | Max 175 °C
Velikost : 62 KB
Aplikace : 100 V, power MOS transistor
PHD6N10E PDF Download