Cesta:OKDatasheet > Semiconductor list > Philips Datasheet > PHW11N50E
PHW11N50E spec: PowerMOS transistor. Avalancne energy rated.
PHW11N50E Podobné
- PHW10N40E
- 400 V, power MOS transistor avalanche energy rated
- PHW10N60E
- 600 V, power MOS transistor avalanche energy rated
- PHW10N60E
- 600 V, power MOS transistor avalanche energy rated
- PHW11N50E
- PowerMOS transistor. Avalancne energy rated.
- PHW11N50E
- 500 V, power MOS transistor avalanche energy rated
- PHW11N50E
- 500 V, power MOS transistor avalanche energy rated
- PHW13N40E
- PowerMOS transistor. Avalanche energy rated.
- PHW14N50E
- PowerMOS transistor. Avalanche energy rated.
PHW11N50E Datasheet a Spec
Výrobcem : Philips
Balení : SOT429
Špendlíky : 3
Teplota : Min -55 °C | Max 150 °C
Velikost : 45 KB
Aplikace : PowerMOS transistor. Avalancne energy rated.
PHW11N50E PDF Download