PHX23NQ10T Podobné

  • PHX23NQ10T
    • 100 V, N-channel trenchMOS transistor
  • PHX2N40E
    • 400 V, power MOS transistor isolated version of PHP4N40E
  • PHX2N50E
    • PowerMOS transistor. Avalanche energy rated.
  • PHX2N50E
    • PowerMOS transistor. Avalanche energy rated.
  • PHX2N50E
    • 500 V, power MOS transistor avalanche energy rated
  • PHX2N60E
    • 600 V, power MOS transistor avalanche energy rated
  • PHX2N60E
    • 600 V, power MOS transistor avalanche energy rated
  • PHX2N60E
    • PowerMOS transistor. Avalanche energy rated.

PHX23NQ10T Datasheet a Spec

Výrobcem : Philips 

Balení : SOT 

Špendlíky : 3 

Teplota : Min -65 °C | Max 150 °C

Velikost : 69 KB

Aplikace : 100 V, N-channel trenchMOS transistor 

PHX23NQ10T PDF Download