F1001 Podobné

  • F1001
    • Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F1001C
    • Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F1003
    • Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F1004
    • Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F1005
    • Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F1006
    • Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F1007
    • Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1001 Datasheet a Spec

Výrobcem : Polyfet RF 

Balení :  

Špendlíky : 4 

Teplota : Min -65 °C | Max 150 °C

Velikost : 40 KB

Aplikace : Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor 

F1001 PDF Download