F1019 spec: Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1019 Podobné

F1012
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1014
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1015
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1016
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1018
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1019
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1019 Datasheet a Spec

Výrobcem : Polyfet RF

Balení :

Špendlíky : 4

Teplota : Min -65 °C | Max 150 °C

Velikost : 41 KB

Aplikace : Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor