F1034 spec: 5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1034 Podobné

F1034
- 5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1034 Datasheet a Spec

Výrobcem : Polyfet RF

Balení :

Špendlíky : 4

Teplota : Min -65 °C | Max 150 °C

Velikost : 34 KB

Aplikace : 5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor