F1058 spec: 30 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1058 Podobné

F1058
- 30 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1058 Datasheet a Spec

Výrobcem : Polyfet RF

Balení :

Špendlíky : 4

Teplota : Min -65 °C | Max 150 °C

Velikost : 41 KB

Aplikace : 30 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor