F1060 spec: 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1060 Podobné

F1060
- 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1063
- 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1065
- 120 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1066
- 100 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1069
- 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1060 Datasheet a Spec

Výrobcem : Polyfet RF

Balení :

Špendlíky : 2

Teplota : Min -65 °C | Max 150 °C

Velikost : 41 KB

Aplikace : 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor