F1070 spec: 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1070 Podobné

F1070
- 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1072
- 100 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1074
- 100 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1076
- 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1076
- 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1077
- 125 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1070 Datasheet a Spec

Výrobcem : Polyfet RF

Balení :

Špendlíky : 4

Teplota : Min -65 °C | Max 150 °C

Velikost : 41 KB

Aplikace : 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor