F1116 spec: 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1116 Podobné

F1116
- 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1116 Datasheet a Spec

Výrobcem : Polyfet RF

Balení :

Špendlíky : 4

Teplota : Min -65 °C | Max 150 °C

Velikost : 46 KB

Aplikace : 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor