F1174 spec: 300 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1174 Podobné

F1170
- 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1174
- 300 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1174 Datasheet a Spec

Výrobcem : Polyfet RF

Balení :

Špendlíky : 4

Teplota : Min -65 °C | Max 150 °C

Velikost : 49 KB

Aplikace : 300 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor