F1280 spec: 80 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1280 Podobné

F1280
- 80 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1280 Datasheet a Spec

Výrobcem : Polyfet RF

Balení :

Špendlíky : 6

Teplota : Min -65 °C | Max 150 °C

Velikost : 42 KB

Aplikace : 80 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor