F1510 spec: 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1510 Podobné

F1510
- 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1516
- 16 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1510 Datasheet a Spec

Výrobcem : Polyfet RF

Balení :

Špendlíky : 2

Teplota : Min -65 °C | Max 150 °C

Velikost : 39 KB

Aplikace : 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor