F2021 spec: 7.5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F2021 Podobné

F2021
- 7.5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F2021 Datasheet a Spec

Výrobcem : Polyfet RF

Balení :

Špendlíky : 2

Teplota : Min -65 °C | Max 150 °C

Velikost : 40 KB

Aplikace : 7.5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor