F2201 spec: 2 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F2201 Podobné

F2201
- 2 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F2202
- 4 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F2201 Datasheet a Spec

Výrobcem : Polyfet RF

Balení :

Špendlíky : 2

Teplota : Min -65 °C | Max 150 °C

Velikost : 38 KB

Aplikace : 2 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor