Cesta:OKDatasheet > Semiconductor list > Polyfet RF Datasheet > F2212
F2212 spec: 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
Cesta:OKDatasheet > Semiconductor list > Polyfet RF Datasheet > F2212
F2212 spec: 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
Výrobcem : Polyfet RF
Balení :
Špendlíky : 2
Teplota : Min -65 °C | Max 150 °C
Velikost : 38 KB
Aplikace : 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor