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L8821P spec: 5 Watt, silicon gate enhancement mode RF power LDMOS transistor
L8821P Podobné
- L8821P
- 5 Watt, silicon gate enhancement mode RF power LDMOS transistor
L8821P Datasheet a Spec
Výrobcem : Polyfet RF
Balení : SO-8
Špendlíky : 8
Teplota : Min -65 °C | Max 150 °C
Velikost : 43 KB
Aplikace : 5 Watt, silicon gate enhancement mode RF power LDMOS transistor
L8821P PDF Download