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LQ821 spec: 20 Watt, silicon gate enhancement mode RF power LDMOS transistor
LQ821 Podobné
- LQ821
- 20 Watt, silicon gate enhancement mode RF power LDMOS transistor
LQ821 Datasheet a Spec
Výrobcem : Polyfet RF
Balení :
Špendlíky : 4
Teplota : Min -65 °C | Max 150 °C
Velikost : 38 KB
Aplikace : 20 Watt, silicon gate enhancement mode RF power LDMOS transistor
LQ821 PDF Download