P121 spec: 1 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor

P121 Podobné

P121
- 1 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor

P121 Datasheet a Spec

Výrobcem : Polyfet RF

Balení : SO-8

Špendlíky : 8

Teplota : Min -65 °C | Max 150 °C

Velikost : 35 KB

Aplikace : 1 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor