P122 spec: "1 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor"

P122 Podobné

P122
- "1 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor"

P122 Datasheet a Spec

Výrobcem : Polyfet RF

Balení : SO

Špendlíky : 6

Teplota : Min -65 °C | Max 150 °C

Velikost : 47 KB

Aplikace : "1 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor"