P281 spec: 2.5 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor

P281 Podobné

P281
- 2.5 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor

P281 Datasheet a Spec

Výrobcem : Polyfet RF

Balení : SO-8

Špendlíky : 8

Teplota : Min -65 °C | Max 150 °C

Velikost : 41 KB

Aplikace : 2.5 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor