2SD1935 spec: NPN epitaxial planar silicon transistor, low-frequency general purpose amp application

2SD1935 Podobné

2SD1012
- "NPN epitaxial planar silicon transistor, low-voltage larg-current amp application"
2SD1012
- NPN epitaxial planar silicon transistor, low-voltage larg-current amp application
2SD1046
- NPN planar silicon transistor, for LF power amp, 50W output, large power switching
2SD1047
- NPN triple diffused planar silicon transistor, 140V/12A, AF 60W output application
2SD1048
- NPN epitaxial planar silicon transistor, for general-purpose AF application
2SD1060
- NPN planar silicon transistor, 50V/5A, switching application
2SD1061
- NPN epitaxial planar silicon transistor, 50V/7A, switching application
2SD1062
- NPN epitaxial planar silicon transistor, 50V/12A, switching application

2SD1935 Datasheet a Spec

Výrobcem : SANYO

Balení : 2018A

Špendlíky : 3

Teplota : Min 0 °C | Max 0 °C

Velikost : 125 KB

Aplikace : NPN epitaxial planar silicon transistor, low-frequency general purpose amp application