2SJ285 Podobné

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    • P-channel MOS silicon FET, very high-speed switching application
  • 2SJ229
    • P-channel MOS silicon FET, very high-speed switching application
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    • P-channel MOS silicon FET, very high-speed switching application
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    • P-channel MOS silicon FET, very high-speed switching application

2SJ285 Datasheet a Spec

Výrobcem : SANYO 

Balení : 2091 

Špendlíky : 3 

Teplota : Min 0 °C | Max 0 °C

Velikost : 79 KB

Aplikace : P-channel MOS silicon FET, very high-speed switching application 

2SJ285 PDF Download